Research on the Radiation Effects and Compact Model of SiGe HBT
Author | : Yabin Sun |
Publisher | : Springer |
Total Pages | : 187 |
Release | : 2017-10-24 |
ISBN-10 | : 9789811046124 |
ISBN-13 | : 9811046123 |
Rating | : 4/5 (24 Downloads) |
Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.